A full-day tutorial on “Characterising GaN HEMTs & SiC MOSFETs – Device Characteristics and Characterisation” at EPE 2025, held in Louis Armand East.
Hauke Lutzen presented the tutorial together with Benedikt Kohlhepp (TU Berlin) and Christian Lottis (H-BRS & Fraunhofer IEE).
The tutorial covered the fundamentals of GaN and SiC device physics, key challenges in characterising Wide Band Gap semiconductors, switching loss measurements, and the influence of measurement setups and probes on measurement accuracy.
The focus was on practical methods and solutions for achieving accurate and reliable characterisation of fast-switching WBG devices under real-world measurement conditions.
More information: EPE 2025 Tutorial N°13
