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M-Shunt is represented by Hauke Lutzen and Nando Kaminski, co-authors of the paper “Separating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Kelvin-Source-Current Measurements” by J. Müller, together with K. Idei and W. Saito (Kyushu University, RIAM). The paper demonstrates how measuring Kelvin-source currents with the M-Shunt allows current asymmetries in parallel-connected SiC-MOSFETs to be traced back to either bond-wire lift-off or temperature differences between the chips.

As part of the “BREMENwelt – Starke Innovationen”, M-Shunt will be present at the Kaufhaus der Wissenschaft, in the former Kaufhof building in Bremen city centre, on the Day of German Unity. Together with VDE, the IALB and bremergy, we’ll be representing electrical engineering. As a startup among research institutions, we’re in a sense also flying the flag for BRIDGE – Gründen aus Bremer Hochschulen, and as an EXIST team we’re delighted to have the opportunity to bring the M-Shunt to such a wide audience.

More information:
Tag der Deutschen Einheit Bremen – Starke Innovationen

A two-day ECPE workshop on current sensing and integrated sensor technologies for power electronics, hosted at the DHI in Bremen. Hauke Lutzen and Nando Kaminski (M-Shunt | Uni Bremen) serve as Technical Program Chairs alongside Olaf Hohlfeld (Infineon) and Bernard Stark (University of Bristol).

Registration now available at ecpe.org.

Since our offices are right there in the DHI, this is basically a home fixture for us – we can’t wait to welcome you to our home turf!