We develop advanced current sensing solutions for next-generation power electronics. Built on cutting-edge research and engineered for real-world applications, the M-Shunt enables accurate measurement and reliable validation of fast-switching systems.
Discover our latest milestones, press coverage, and upcoming events.
News
Meet M-Shunt at ECCE Europe: Bond Wire Lift-Off Demonstrator
At ECCE Europe, we show live how bond wire lift-off affects parallel SiC-MOSFETs — using the same PCB from our ISPS 2025 publication.
Two discrete SiC-MOSFETs are connected in parallel, each fitted with an M-Shunt in the load path to capture its individual drain current. A second pair of M-Shunts sits in the shared Kelvin-source path. As bond wires are progressively removed from one of the two devices, visitors can see the current shift between the chips — and how the Kelvin-source current picks up the very first removed bond wire far more clearly than the load current alone.
The full background and measurement results are written up in our application article: Detecting Bond Wire Lift-Off in Parallel SiC-MOSFETs — with the M-Shunt Kelvin-Source Current
PCIM Recap
That’s a wrap.
A few intense but exciting days at PCIM — full of valuable conversations, memorable moments, and great feedback on the M-Shunt in action.
This year, the M-Shunt was on show across four booths: from double pulse testing with Rohde & Schwarz and PMK/Iwatsu/Cleverscope, to system-level demos at ECPE/Eurocomp and the University of Bremen. On top of that, Hauke Lutzen kicked things off with a full-day tutorial on power semiconductor characterisation, and we presented our latest paper on detecting asymmetries in multi-chip SiC power modules.
Thanks to everyone who stopped by — see you next time!
M-Shunt at PCIM
At PCIM, the M-Shunt is showcased across multiple booths, demonstrating real-world current measurement in modern power electronics applications.
From double pulse testing to system-level validation, we present different setups highlighting the performance of the M-Shunt in fast-switching environments.
On the Monday before the fair, Hauke Lutzen will be speaking at a full-day tutorial on power semiconductor characterisation — covering WBG fundamentals in the morning and switching loss measurements in the afternoon. More information and registration.
Also presented at PCIM: the paper “Detecting Asymmetries within Multi-Chip SiC Power Modules by Means of the Kelvin Source” by J. Müller, H. Lutzen, T. Buchholz, J.-H. Peters, W. Saito and N. Kaminski. Read more.
M-Shunt at Rohde & Schwarz Power Electronics Online Conference
Hauke Lutzen joined the Rohde & Schwarz Power Electronics Online Conference as an invited speaker at the event “From Design to Validation”, held from May 5th to May 6th, 2026.
The conference brought together experts from industry and academia to discuss modern approaches for designing, characterizing, and validating power electronic systems — from semiconductor components to grid-connected applications.
During the event, Hauke Lutzen presented insights into high-bandwidth current measurement and advanced sensor technologies for fast-switching power electronics applications, contributing perspectives from both the IALB – Institute for Electrical Drives, Power Electronics and Devices and M-Shunt environments.
For more information about the conference, please refer to the official Rohde & Schwarz Power Electronics Online Conference.
Understanding Faults in Electronics for Harsh Environments
Nando Kaminski and Sven Clausner contributed to the book Electronics Use in Harsh Environments, with Kaminski also serving as one of the editors.
The publication focuses on reliability and specific fault mechanisms in electronic systems operating under harsh environmental conditions. For us, this topic is especially relevant, as reliable fault detection requires a deep understanding of how faults occur and how they appear in electrical signals.
The book is worth reading for anyone interested in the background and failure mechanisms of modern power electronic systems in demanding environments.
M-Shunt Wins First Place at CAMPUSiDEEN 2025
The M-Shunt project from the Institute for Power Electronics and Electrical Drives (IALB) at the University of Bremen and EI-Lab from University of Applied Sciences Kempten has been awarded first place in the “Business Concepts” category at CAMPUSiDEEN 2025. The competition, organized by “BRIDGE – Gründen aus Bremer Hochschulen”, recognizes outstanding business ideas from all universities in Bremen. The award highlights the innovative measurement technology developed by the research-based founding team and marks an important milestone on the path toward market readiness.
Upcoming Events
Meet us at industry events and see the M-Shunt in action.
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ICSCRM 2026 in Yokohama, Japan
from September 27th, 2026 to October 2nd, 2026
M-Shunt is represented by Hauke Lutzen and Nando Kaminski, co-authors of the paper “Separating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Kelvin-Source-Current Measurements” by J. Müller, together with K. Idei and W. Saito (Kyushu University, RIAM). The paper demonstrates how measuring Kelvin-source currents with the M-Shunt allows current asymmetries in parallel-connected SiC-MOSFETs to be traced back to either bond-wire lift-off or temperature differences between the chips.
Tag der deutschen Einheit – Kaufhaus der Wissenschaft in Bremen
from October 2nd, 2026 16:00 to October 4th, 2026 20:00
As part of the “BREMENwelt – Starke Innovationen”, M-Shunt will be present at the Kaufhaus der Wissenschaft, in the former Kaufhof building in Bremen city centre, on the Day of German Unity. Together with VDE, the IALB and bremergy, we’ll be representing electrical engineering. As a startup among research institutions, we’re in a sense also flying the flag for BRIDGE – Gründen aus Bremer Hochschulen, and as an EXIST team we’re delighted to have the opportunity to bring the M-Shunt to such a wide audience.
More information:
Tag der Deutschen Einheit Bremen – Starke Innovationen
ECPE Double Workshop ‘Current Sensing / Integrated Sensors in Power Electronics’ in Bremen
from November 24th, 2026 to November 25th, 2026
A two-day ECPE workshop on current sensing and integrated sensor technologies for power electronics, hosted at the DHI in Bremen. Hauke Lutzen and Nando Kaminski (M-Shunt | Uni Bremen) serve as Technical Program Chairs alongside Olaf Hohlfeld (Infineon) and Bernard Stark (University of Bristol).
Registration now available at ecpe.org.
Since our offices are right there in the DHI, this is basically a home fixture for us – we can’t wait to welcome you to our home turf!
