In Hall 7, Booth 7-100, we demonstrate a double pulse test of discrete SiC MOSFETs in a dedicated setup at the Rohde & Schwarz booth.
The Mini M-Shunt and Diamond M-Shunt are used side by side to compare measurement performance under fast transient switching conditions — giving a direct, practical impression of how shunt geometry affects bandwidth and signal quality.
This setup builds on our ongoing collaboration with Rohde & Schwarz. In May 2026, Hauke Lutzen joined their Power Electronics Online Conference as an invited speaker — presenting insights into high-bandwidth current measurement and advanced sensor technologies for fast-switching applications. Read the full recap on our website.
