M-Shunt is represented by Hauke Lutzen and Nando Kaminski, co-authors of the paper “Separating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Kelvin-Source-Current Measurements” by J. Müller, together with K. Idei and W. Saito (Kyushu University, RIAM). The paper demonstrates how measuring Kelvin-source currents with the M-Shunt allows current asymmetries in parallel-connected SiC-MOSFETs to be traced back to either bond-wire lift-off or temperature differences between the chips.
