Nando Kaminski

Portrait of Prof. Dr.-Ing. Nando Kaminski, head of the Electrical Devices group at IALB, University of Bremen, and expert in power-semiconductor devices.
© IALB / Universität Bremen

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  • PCIM Recap

    That’s a wrap.

    A few intense but exciting days at PCIM — full of valuable conversations, memorable moments, and great feedback on the M-Shunt in action.

    This year, the M-Shunt was on show across four booths: from double pulse testing with Rohde & Schwarz and PMK/Iwatsu/Cleverscope, to system-level demos at ECPE/Eurocomp and the University of Bremen. On top of that, Hauke Lutzen kicked things off with a full-day tutorial on power semiconductor characterisation, and we presented our latest paper on detecting asymmetries in multi-chip SiC power modules.

    Thanks to everyone who stopped by — see you next time!

  • Pushing Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for Even Faster Transients

    H. Lutzen, J. Müller, V. Polezhaev, S. Clausner, T. Huesgen and N. Kaminski

    in PCIM Europe 2026 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    Event page

  • Detecting Asymmetries within Multi-Chip SiC Power Modules by Means of the Kelvin Source

    J. Müller, H. Lutzen, T. Buchholz, J.H. Peters, W. Saito and N. Kaminski

    in ISPSD 2026 – IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas, USA

    Event Page IEEE Xplore

  • Understanding Faults in Electronics for Harsh Environments

    Nando Kaminski and Sven Clausner contributed to the book Electronics Use in Harsh Environments, with Kaminski also serving as one of the editors.

    The publication focuses on reliability and specific fault mechanisms in electronic systems operating under harsh environmental conditions. For us, this topic is especially relevant, as reliable fault detection requires a deep understanding of how faults occur and how they appear in electrical signals.

    The book is worth reading for anyone interested in the background and failure mechanisms of modern power electronic systems in demanding environments.

    More about the book

  • From Insight into Bandwidth to Fast-Transient Precision: Diamond M-Shunts for Wideband Current Measurement

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in CIPS 2026 – International Conference on Integrated Power Electronics Systems, Dresden, Germany

    Event page

  • Impact of Bond Wire Lift-Off on the Switching Transients of SiC-MOSFETs –Kelvin-Source Currents as Potential Indicator of Degradation

    J. Müller, H. Lutzen, M. B. Çoruk, W. Saito and N. Kaminski

    2025 17th International Seminar on Power Semiconductors (ISPS), Prague, Czech Republic, 2025

    IEEE Xplore

  • On the Importance of Appropriate Current Probes for Double Pulse Tests and How to Select Them

    S. Sprunck, H. Lutzen, N. Kaminski and M. Jung

    in PCIM Europe 2025 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    IEEE Explore

  • Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range

    H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski

    in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    IEEE Explore

  • Why the 3 dB Bandwidth of a Current Sensor Does Not Provide an Exact Statement About Its Measurement Capability

    H. Lutzen, P. Ziegler, J. Roth-Stielow and N. Kaminski

    in CIPS 2024 – 13th International Conference on Integrated Power Electronics Systems, Düsseldorf, Germany

    IEEE Explore

  • A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark

    IEEE Explore

  • Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany

    IEEE Explore

  • Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements

    H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski

    in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany

    IEEE Explore

  • Optimisation and Proof of Concept Studies for the M-Shunt Structure Applied to Printed Circuit Boards

    H. Lutzen, K. Mitsui, D. Silber, K. Wada and N. Kaminski

    in CIPS 2020 – 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany

    IEEE Explore