Vladimir Polezhaev

Portrait of Vladimir Polezhaev, power electronics engineer specializing in semiconductor embedding and current sensor development
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News

  • PCIM Recap

    That’s a wrap.

    A few intense but exciting days at PCIM — full of valuable conversations, memorable moments, and great feedback on the M-Shunt in action.

    This year, the M-Shunt was on show across four booths: from double pulse testing with Rohde & Schwarz and PMK/Iwatsu/Cleverscope, to system-level demos at ECPE/Eurocomp and the University of Bremen. On top of that, Hauke Lutzen kicked things off with a full-day tutorial on power semiconductor characterisation, and we presented our latest paper on detecting asymmetries in multi-chip SiC power modules.

    Thanks to everyone who stopped by — see you next time!

  • Pushing Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for Even Faster Transients

    H. Lutzen, J. Müller, V. Polezhaev, S. Clausner, T. Huesgen and N. Kaminski

    in PCIM Europe 2026 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    Event page

  • M-Shunt Wins First Place at CAMPUSiDEEN 2025

    The M-Shunt project from the Institute for Power Electronics and Electrical Drives (IALB) at the University of Bremen and EI-Lab from University of Applied Sciences Kempten has been awarded first place in the “Business Concepts” category at CAMPUSiDEEN 2025. The competition, organized by “BRIDGE – Gründen aus Bremer Hochschulen”, recognizes outstanding business ideas from all universities in Bremen. The award highlights the innovative measurement technology developed by the research-based founding team and marks an important milestone on the path toward market readiness.

    Please find the articles online: BRIDGE IALB

  • Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range

    H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski

    in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    IEEE Explore

  • A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark

    IEEE Explore

  • Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany

    IEEE Explore

  • Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements

    H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski

    in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany

    IEEE Explore