Upcoming:
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Past:
From Theory to Practice: Semiconductor Characterisation at PCIM 2026 in Nuremberg
June 8th, 2026 from 09:00 until 17:30
A full-day tutorial on power semiconductor characterisation, split into two sessions: WBG fundamentals in the morning, switching losses in the afternoon. Hauke Lutzen will be speaking in the afternoon session alongside Christian Lottis (Bonn-Rhein-Sieg University of Applied Sciences) and Sebastian Sprunck (Fraunhofer IEE).
Part 1 — Fundamentals of WBG Power Semiconductors (09:00)
Part 2 — Switching Losses in Power Semiconductors (13:30)
Switching-Loss Measurement Seminar in Kassel, Germany in Kassel
from November 25th, 2025 to November 26th, 2025
Together with Sebastian Sprunck from Fraunhofer Institute for Energy Economics and Energy System Technology, Olaf Bendix from Tektronix, as well as Christian Lottis and Marco Jung from Hochschule Bonn-Rhein-Sieg, Hauke Lutzen is participating in a seminar on switching-loss measurement for wide-bandgap devices taking place in Kassel.
Representing both the IALB – Institute for Electrical Drives, Power Electronics and Devices and M-Shunt, Hauke Lutzen will share insights into sensor applications and sensor design for high-performance power electronics measurements.
The seminar brings together experts from academia and industry to discuss advanced measurement techniques, practical challenges, and emerging solutions for wide-bandgap semiconductor technologies. Participants can look forward to an inspiring exchange and hands-on technical discussions.
For more information, please refer to the seminar organizers and participating institutions.
ECCE Europe 2025 in Birmingham, UK
from September 1st, 2025 to September 3rd, 2025
September 2025
During ECCE Europe 2025, Hauke Lutzen and Sebastian Sprunck hosted a fully booked three-hour seminar on “Switching Losses in Power Electronics” at IET Birmingham, Austin Court.
With 33 participants, the seminar focused on the challenges involved in accurately characterising switching losses in Wide Band Gap devices and on practical approaches for improving measurement quality and reliability.
The compact course was based on research and teaching activities at Fraunhofer IEE, Hochschule Bonn-Rhein-Sieg and the IALB – Institute for Electrical Drives, Power Electronics and Devices.
The seminar also served as an introduction to the more extensive two-day course on the same topic, including practical hands-on sessions with Tektronix.
EPE 2025 in Paris
May 31st, 2025
A full-day tutorial on “Characterising GaN HEMTs & SiC MOSFETs – Device Characteristics and Characterisation” at EPE 2025, held in Louis Armand East.
Hauke Lutzen presented the tutorial together with Benedikt Kohlhepp (TU Berlin) and Christian Lottis (H-BRS & Fraunhofer IEE).
The tutorial covered the fundamentals of GaN and SiC device physics, key challenges in characterising Wide Band Gap semiconductors, switching loss measurements, and the influence of measurement setups and probes on measurement accuracy.
The focus was on practical methods and solutions for achieving accurate and reliable characterisation of fast-switching WBG devices under real-world measurement conditions.
More information: EPE 2025 Tutorial N°13
PCIM 2025 in Nuremberg, Germany
from May 6th, 2025 to May 8th, 2025
Hauke Lutzen was a co-author of the paper “On the Importance of Appropriate Current Probes for Double Pulse Tests and How to Select Them” from S. Sprunck together with N. Kaminski, and M. Jung.
