The latest M-Shunt-related publications are presented below, highlighting recent research outcomes, methodological advances, and emerging applications in the field.
Investigating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Differential Kelvin-Source-Current Measurements
J. Müller, J. Brylak, H. Lutzen, Kazune Idei, Wataru Saito and N. Kaminski
ICSCRM 2026 -International Conference on Silicon Carbide and Related Materials, Yokohama, Japan.
Detection of Bond Wire Lift-Off Using Machine Learning on Switching Waveforms of Two ParalleledSiC-MOSFETs
K. Idei, J. Müller, H. Lutzen, S. Nishizawa, N. Kaminski and Wataru Saito
ESREF – European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Wien, Austria
Pushing Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for Even Faster Transients
H. Lutzen, J. Müller, V. Polezhaev, S. Clausner, T. Huesgen and N. Kaminski
in PCIM Europe 2026 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany
Detecting Asymmetries within Multi-Chip SiC Power Modules by Means of the Kelvin Source
J. Müller, H. Lutzen, T. Buchholz, J.H. Peters, W. Saito and N. Kaminski
in ISPSD 2026 – IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas, USA
From Insight into Bandwidth to Fast-Transient Precision: Diamond M-Shunts for Wideband Current Measurement
H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski
in CIPS 2026 – International Conference on Integrated Power Electronics Systems, Dresden, Germany
Impact of Bond Wire Lift-Off on the Switching Transients of SiC-MOSFETs –Kelvin-Source Currents as Potential Indicator of Degradation
J. Müller, H. Lutzen, M. B. Çoruk, W. Saito and N. Kaminski
2025 17th International Seminar on Power Semiconductors (ISPS), Prague, Czech Republic, 2025
On the Importance of Appropriate Current Probes for Double Pulse Tests and How to Select Them
S. Sprunck, H. Lutzen, N. Kaminski and M. Jung
in PCIM Europe 2025 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany
Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range
H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski
in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany
Why the 3 dB Bandwidth of a Current Sensor Does Not Provide an Exact Statement About Its Measurement Capability
H. Lutzen, P. Ziegler, J. Roth-Stielow and N. Kaminski
in CIPS 2024 – 13th International Conference on Integrated Power Electronics Systems, Düsseldorf, Germany
A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices
H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski
in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark
Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling
H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski
in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany
Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements
H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski
in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany
Optimisation and Proof of Concept Studies for the M-Shunt Structure Applied to Printed Circuit Boards
H. Lutzen, K. Mitsui, D. Silber, K. Wada and N. Kaminski
in CIPS 2020 – 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany