Hauke Lutzen

Portrait of Hauke Lutzen, expert in current measurement technology and developer of the M-Shunt
© IALB / Universität Bremen

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News

  • PCIM Recap

    That’s a wrap.

    A few intense but exciting days at PCIM — full of valuable conversations, memorable moments, and great feedback on the M-Shunt in action.

    This year, the M-Shunt was on show across four booths: from double pulse testing with Rohde & Schwarz and PMK/Iwatsu/Cleverscope, to system-level demos at ECPE/Eurocomp and the University of Bremen. On top of that, Hauke Lutzen kicked things off with a full-day tutorial on power semiconductor characterisation, and we presented our latest paper on detecting asymmetries in multi-chip SiC power modules.

    Thanks to everyone who stopped by — see you next time!

  • Pushing Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for Even Faster Transients

    H. Lutzen, J. Müller, V. Polezhaev, S. Clausner, T. Huesgen and N. Kaminski

    in PCIM Europe 2026 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    Event page

  • Detecting Asymmetries within Multi-Chip SiC Power Modules by Means of the Kelvin Source

    J. Müller, H. Lutzen, T. Buchholz, J.H. Peters, W. Saito and N. Kaminski

    in ISPSD 2026 – IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas, USA

    Event Page IEEE Xplore

  • M-Shunt at PCIM

    At PCIM, the M-Shunt is showcased across multiple booths, demonstrating real-world current measurement in modern power electronics applications.

    From double pulse testing to system-level validation, we present different setups highlighting the performance of the M-Shunt in fast-switching environments.

    On the Monday before the fair, Hauke Lutzen will be speaking at a full-day tutorial on power semiconductor characterisation — covering WBG fundamentals in the morning and switching loss measurements in the afternoon. More information and registration.

    Also presented at PCIM: the paper “Detecting Asymmetries within Multi-Chip SiC Power Modules by Means of the Kelvin Source” by J. Müller, H. Lutzen, T. Buchholz, J.-H. Peters, W. Saito and N. Kaminski. Read more.

  • M-Shunt at Rohde & Schwarz Power Electronics Online Conference

    Hauke Lutzen joined the Rohde & Schwarz Power Electronics Online Conference as an invited speaker at the event “From Design to Validation”, held from May 5th to May 6th, 2026.

    The conference brought together experts from industry and academia to discuss modern approaches for designing, characterizing, and validating power electronic systems — from semiconductor components to grid-connected applications.

    During the event, Hauke Lutzen presented insights into high-bandwidth current measurement and advanced sensor technologies for fast-switching power electronics applications, contributing perspectives from both the IALB – Institute for Electrical Drives, Power Electronics and Devices and M-Shunt environments.

    For more information about the conference, please refer to the official Rohde & Schwarz Power Electronics Online Conference.

  • From Insight into Bandwidth to Fast-Transient Precision: Diamond M-Shunts for Wideband Current Measurement

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in CIPS 2026 – International Conference on Integrated Power Electronics Systems, Dresden, Germany

    Event page

  • M-Shunt Wins First Place at CAMPUSiDEEN 2025

    The M-Shunt project from the Institute for Power Electronics and Electrical Drives (IALB) at the University of Bremen and EI-Lab from University of Applied Sciences Kempten has been awarded first place in the “Business Concepts” category at CAMPUSiDEEN 2025. The competition, organized by “BRIDGE – Gründen aus Bremer Hochschulen”, recognizes outstanding business ideas from all universities in Bremen. The award highlights the innovative measurement technology developed by the research-based founding team and marks an important milestone on the path toward market readiness.

    Please find the articles online: BRIDGE IALB

  • Impact of Bond Wire Lift-Off on the Switching Transients of SiC-MOSFETs –Kelvin-Source Currents as Potential Indicator of Degradation

    J. Müller, H. Lutzen, M. B. Çoruk, W. Saito and N. Kaminski

    2025 17th International Seminar on Power Semiconductors (ISPS), Prague, Czech Republic, 2025

    IEEE Xplore

  • On the Importance of Appropriate Current Probes for Double Pulse Tests and How to Select Them

    S. Sprunck, H. Lutzen, N. Kaminski and M. Jung

    in PCIM Europe 2025 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    IEEE Explore

  • Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range

    H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski

    in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

    IEEE Explore

  • Why the 3 dB Bandwidth of a Current Sensor Does Not Provide an Exact Statement About Its Measurement Capability

    H. Lutzen, P. Ziegler, J. Roth-Stielow and N. Kaminski

    in CIPS 2024 – 13th International Conference on Integrated Power Electronics Systems, Düsseldorf, Germany

    IEEE Explore

  • A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark

    IEEE Explore

  • Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany

    IEEE Explore

  • Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements

    H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski

    in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany

    IEEE Explore

  • Optimisation and Proof of Concept Studies for the M-Shunt Structure Applied to Printed Circuit Boards

    H. Lutzen, K. Mitsui, D. Silber, K. Wada and N. Kaminski

    in CIPS 2020 – 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany

    IEEE Explore