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Meet M-Shunt at ECCE Europe: Bond Wire Lift-Off Demonstrator
At ECCE Europe, we show live how bond wire lift-off affects parallel SiC-MOSFETs — using the same PCB from our ISPS 2025 publication.
Two discrete SiC-MOSFETs are connected in parallel, each fitted with an M-Shunt in the load path to capture its individual drain current. A second pair of M-Shunts sits in the shared Kelvin-source path. As bond wires are progressively removed from one of the two devices, visitors can see the current shift between the chips — and how the Kelvin-source current picks up the very first removed bond wire far more clearly than the load current alone.
The full background and measurement results are written up in our application article: Detecting Bond Wire Lift-Off in Parallel SiC-MOSFETs — with the M-Shunt Kelvin-Source Current
PCIM Recap
That’s a wrap.
A few intense but exciting days at PCIM — full of valuable conversations, memorable moments, and great feedback on the M-Shunt in action.
This year, the M-Shunt was on show across four booths: from double pulse testing with Rohde & Schwarz and PMK/Iwatsu/Cleverscope, to system-level demos at ECPE/Eurocomp and the University of Bremen. On top of that, Hauke Lutzen kicked things off with a full-day tutorial on power semiconductor characterisation, and we presented our latest paper on detecting asymmetries in multi-chip SiC power modules.
Thanks to everyone who stopped by — see you next time!
Pushing Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for Even Faster Transients
H. Lutzen, J. Müller, V. Polezhaev, S. Clausner, T. Huesgen and N. Kaminski
in PCIM Europe 2026 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany
M-Shunt Wins First Place at CAMPUSiDEEN 2025
The M-Shunt project from the Institute for Power Electronics and Electrical Drives (IALB) at the University of Bremen and EI-Lab from University of Applied Sciences Kempten has been awarded first place in the “Business Concepts” category at CAMPUSiDEEN 2025. The competition, organized by “BRIDGE – Gründen aus Bremer Hochschulen”, recognizes outstanding business ideas from all universities in Bremen. The award highlights the innovative measurement technology developed by the research-based founding team and marks an important milestone on the path toward market readiness.
Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range
H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski
in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany
A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices
H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski
in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark
Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling
H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski
in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany
Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements
H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski
in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany
