Conferences

A two-day ECPE workshop on current sensing and integrated sensor technologies for power electronics, hosted at the DHI in Bremen. Hauke Lutzen and Nando Kaminski (M-Shunt | Uni Bremen) serve as Technical Program Chairs alongside Olaf Hohlfeld (Infineon) and Bernard Stark (University of Bristol).

Registration now available at ecpe.org.

Since our offices are right there in the DHI, this is basically a home fixture for us – we can’t wait to welcome you to our home turf!

At the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM), Hauke Lutzen will present the publication “Pushing the Boundaries of Miniaturisation in Current Sensing: Ultra-Compact Mini-M-Shunts for faster transients“.

Visitors are invited to meet our team in Hall 6 at Booth 419 during the exhibition to discuss the latest developments in ultra-compact current sensing solutions and explore how our Mini-M-Shunts enable improved performance in high-speed, high-efficiency power electronics applications.

For more information, please refer to: PCIM website

Source: PCIM 2026 – Presented by Nando Kaminski

At the International Conference on Integrated Power Electronics Systems (CIPS), Vladimir Polezhaev will present the publication “Design, fabrication and testing of a novel 650V / 10 mΩ GaN embedded Half-bridge-in-Package (eHiP) with optimized thermal performance and low parasitics“, while Hauke Lutzen will present “From Insight into Bandwidth to Fast-Transient Precision: Diamond-M-Shunts for Wideband Current Measurement“.

For more information, please refer to: CIPS website

image: Marc Wiegelmann / VDE

September 2025

During ECCE Europe 2025, Hauke Lutzen and Sebastian Sprunck hosted a fully booked three-hour seminar on “Switching Losses in Power Electronics” at IET Birmingham, Austin Court.

With 33 participants, the seminar focused on the challenges involved in accurately characterising switching losses in Wide Band Gap devices and on practical approaches for improving measurement quality and reliability.

The compact course was based on research and teaching activities at Fraunhofer IEE, Hochschule Bonn-Rhein-Sieg and the IALB – Institute for Electrical Drives, Power Electronics and Devices.

The seminar also served as an introduction to the more extensive two-day course on the same topic, including practical hands-on sessions with Tektronix.

A full-day tutorial on “Characterising GaN HEMTs & SiC MOSFETs – Device Characteristics and Characterisation” at EPE 2025, held in Louis Armand East.

Hauke Lutzen presented the tutorial together with Benedikt Kohlhepp (TU Berlin) and Christian Lottis (H-BRS & Fraunhofer IEE).

The tutorial covered the fundamentals of GaN and SiC device physics, key challenges in characterising Wide Band Gap semiconductors, switching loss measurements, and the influence of measurement setups and probes on measurement accuracy.

The focus was on practical methods and solutions for achieving accurate and reliable characterisation of fast-switching WBG devices under real-world measurement conditions.

More information: EPE 2025 Tutorial N°13

Hauke Lutzen was a co-author of the paper “On the Importance of Appropriate Current Probes for Double Pulse Tests and How to Select Them” from S. Sprunck together with N. Kaminski, and M. Jung.

Hauke Lutzen pulished “Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range” together with J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski.

Hauke Lutzen published “Why the 3 dB Bandwidth of a Current Sensor Does Not Provide an Exact Statement About Its Measurement Capability” together with P. Ziegler, J. Roth-Stielow and N. Kaminski.

Hauke Lutzen published “A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices” together with J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

Hauke Lutzen published “Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling” together with J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

Hauke Lutzen published “Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements” together with V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski