Investigating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Differential Kelvin-Source-Current Measurements

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J. Müller, J. Brylak, H. Lutzen, Kazune Idei, Wataru Saito and N. Kaminski

ICSCRM 2026 -International Conference on Silicon Carbide and Related Materials, Yokohama, Japan.

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